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OPB710
  • OPB710
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貨物所在地:上海上海市

產(chǎn)地: 墨西哥

更新時(shí)間:2025-03-12 21:01:02

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OPB710 and OPB710F consist of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor.

OPB710 and OPB710F consist of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. OPB730 and OPB730F consist of a gallium arsenide infrared emitting diode and an NPN silicon photodarlington. On each sensor, the emitting diode and detector are mounted side-by-side on parallel axes in a standard TO-72 header. A black plastic sleeve is attached and filled with encapsulating epoxy to cover the emitter and detector. The OPB710F and OPB730F (“F” versions) have a filtering material added to the epoxy to reduce the effect of ambient light. The package contains an internal barrier which prevents diode emissions from reaching the sensor directly. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information.

Applications:

? Non-contact reflective object sensor

? Assembly line automation

? Machine automation

? Machine safety

? End of travel sensor

? Door sensor

Features:

? Choice of phototransistor or photodarlington output

? Unfocused for sensing diffuse surface

? Mounted on standard TO-72 header

? Available in clear encapsulating epoxy (OPB710, OPB730)

? Filtered to reduce the effect of visible or fluorescent light

(OPB710F, OPB730F)

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